The Global Power Transistor Market size is expected to reach $20.2 billion by 2030, rising at a market growth of 5.6% CAGR during the forecast period. In the year 2022, the market attained a volume of 2,142.9 million units, experiencing a growth of 2.6% (2019-2022).
The consumer electronics industry employs power transistors extensively. As consumer electronics such as earbuds, laptops, smartphones, wearables, and other portable devices become more prevalent, the market is expected to expand. Therefore, the Consumer Electronics segment will register 1/4th share in the market by 2030. The use of 5G-enabled devices that facilitate the adoption of various foundry nodes has expanded with the introduction of 5G technology. The rising demand for improved semiconductors in consumer electronics will be the main driver for the market.
The major strategies followed by the market participants are Partnerships as the key developmental strategy to keep pace with the changing demands of end users. For instance, In June, 2023, STMicroelectronics N.V. partnered with Airbus, to improve electric powertrain performance or decrease the size of upcoming aircraft by up to 20%. Additionally, In October, 2022, Infineon Technologies AG extended the partnership with VinFast, to establish a shared expertise hub in Hanoi concentrating on electric mobility, aimed at expediting VinFast’s advancement in smart mobility solutions.
Based on the Analysis presented in the KBV Cardinal matrix; Texas Instruments, Inc. is the forerunner in the Market. In March, 2023, Texas Instruments, Inc. collaborated with LITEON Technology, to address the need for more compact and dependable systems. Companies such as Infineon Technologies AG, STMicroelectronics N.V., Microchip Technology Incorporated, and Mitsubishi Electric Corporation are some of the key innovators in the Market.
Market Growth Factors
Growing environmental awareness of electronics and semiconductor industries
The electronics and semiconductor industries are constantly expanding their usage of cutting-edge technology. Environmental issues like pollution and e-waste are getting worse as technology advances. Most end users choose to incorporate environmentally friendly transistors, diodes, and triodes in their finished products to resolve this issue. Pollution is being reduced due to the growing use of transistors like metal-oxide-semiconductor field effect transistors (MOSFET) and field-effect transistors (FET). Along with releasing novel semiconductor materials to supplement silicon and germanium, manufacturers are also sponsoring several R&D programs to improve the performance characteristics of power transistors. Thus, the rising awareness about environment will aid in the expansion of the market in the coming years.
Technological advances in the Internet of Things
The integration of IoT technology in industries, such as manufacturing, logistics, agriculture, energy, and healthcare, is leading to enhanced automation, predictive maintenance, and improved operational efficiency. Urban areas are leveraging IoT to create smart city solutions that enhance transportation, energy management, waste management, public safety, and overall quality of life for residents. Similarly, in healthcare, IoT is being used for remote patient monitoring, wearable health devices, telemedicine, and improved healthcare delivery through data-driven insights. Moreover, IoT applications in agriculture, known as AgTech or Smart Agriculture, are enabling precision farming, crop monitoring, livestock tracking, and resource optimization. Therefore, the increasing use of IoT across various sectors is driving the growth of the market.
Market Restraining Factors
Low durability and high price of transistor
The intense competition in the electrical component sector puts pressure on manufacturers’ prices. Customers frequently look for affordable options, which forces components to reduce production costs while preserving quality and performance. This reduction in price might reduce profit margins for smaller players. The switching frequency issue is another significant technical difficulty with this transistor. Above a frequency of 15 KHz, the power transistor cannot function properly. They will malfunction or break down when used at frequencies greater than 15 KHz. Additionally, this transistor is readily damaged by thermal runaway and has a shallow capacity for reverse blocking. The elements mentioned above are to blame for limiting the market expansion.
Type Outlook
Based on type, the market is classified into bipolar junction transistor, field effect transistor, and heterojunction bipolar transistor. The bipolar junction transistor segment held the largest revenue share in the market in 2022. This growth is due to the bipolar junction transistor’s ability to convert a small quantity of input current into a large amount of output current. Additionally, they are frequently used to improve signal and switch amplification. Bipolar junction transistors are utilized in industrial automation systems for a variety of purposes, including power management, motor control, and sensing.
Technology Outlook
On the basis of technology, the market is classified into low-voltage FETs, RF microwave power, high-voltage FETs, and IGBT transistor. The RF microwave power segment recorded a considerable revenue share in the market in 2022. The growth of the segment is owed to the expanding use of radio frequency and microwave equipment in many industries like the aerospace and defence. Solid-state semiconductors called RF and microwave power transistors are used to amplify RF and microwave signals. They are employed to generate strong signals for radar, communication, and other applications.
Vertical Outlook
Based on the industry vertical, the market is classified into consumer electronics, IT & telecommunication, automotive, manufacturing, and others. The manufacturing segment in the market generated the highest revenue in 2022. The usage of power transistors meets the complex requirements of the avionics, radar, and communications systems. They can enhance the performance of transmitter amplifier systems in missile, space, ship, air, and ground environments.
Regional Outlook
Region-wise, the market is analysed across North America, Asia Pacific, Europe, and LAMEA. The Asia Pacific region procured the highest revenue share in the market in 2022. It is because industrialized nations like South Korea, China, Japan, Taiwan, and Singapore have access to cutting-edge semiconductor and electronics manufacturing facilities as well as cutting-edge research and development facilities. Additionally, the increasing consumer base present in the region results in a higher demand for consumer electronics, automobile, manufacturing industries, etc.
The market research report covers the analysis of key stakeholders of the market. Key companies profiled in the report include Texas Instruments, Inc., Infineon Technologies AG, NXP Semiconductors N.V., STMicroelectronics N.V., Microchip Technology Incorporated, Mitsubishi Electric Corporation, Renesas Electronics Corporation, Vishay Intertechnology, Inc., Rohm Co., Ltd. and Diodes Incorporated
Recent Strategies Deployed in Power Transistor Market
Partnerships, Collaborations and Agreements:
Jun-2023: STMicroelectronics N.V. partnered with Airbus, a European multinational aerospace corporation. The partnership would be on research and development of power electronics to improve electric powertrain performance or decrease the size of upcoming aircraft by up to 20%. Additionally, both companies have focused on developing SiC and GaN devices, packages, and modules adapted for Airbus aircraft.
Jun-2023: Renesas Electronics Corporation collaborated with Nidec Corporation, a Japanese manufacturer and distributor of electric motors. Under the collaboration, both companies would develop semiconductor solutions for an advanced E-Axle (X-in-1 system) that combines an electric vehicle (EV) drive motor and power electronics for electric vehicles.
Mar-2023: Texas Instruments, Inc. collaborated with LITEON Technology, a Taiwanese company that primarily manufactures consumer electronics. Under this collaboration, LITEON Technology will use TI’s advanced gallium nitride (GaN) field-effect transistor (FET) alongside C2000TM real-time microcontrollers (MCUs) for its latest high-performance server power supply unit (PSU) designed for the North American market. Additionally, by combining TI’s GaN products and C2000TM real-time MCUs, designers can more effectively address the need for more compact and dependable systems.
Oct-2022: Infineon Technologies AG extended the partnership with VinFast, Vietnam’s first global smart electric car maker. Through this partnership, both companies will establish a shared expertise hub in Hanoi concentrating on electric mobility, aimed at expediting VinFast’s advancement in smart mobility solutions.
Sep-2022: Rohm Co., Ltd. partnered with SemiDrive Technology, a leading automotive-grade chip vendor in China, for advanced technology development in the automotive field. The initial outcome of this endeavor is the availability of SemiDrive’s automotive SoC (X9 series) solution board, which includes ROHM’s PMIC. Through this partnership, both companies sustained their contributions to automotive technological advancements by partnering across a wide range of domains.
May-2022: STMicroelectronics N.V. collaborated with MACOM Technology Solutions Holdings Inc., a leading supplier of semiconductor products for Telecommunications. This collaboration would develop radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes.
Product Launches and Product Expansions:
Jun-2023: Mitsubishi Electric Corporation introduced a fresh design for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) with an incorporated Schottky barrier diode (SBD), implemented in a 3.3 kV full SiC power module. The new structure aims to reduce the size and enhance the energy efficiency of railway traction systems, while also promoting carbon neutrality by encouraging the use of DC power transmission.
Jul-2022: Mitsubishi Electric Corporation announced the launch of a 50W silicon radiofrequency (RF) high-power metal-oxide-semiconductor field-effect transistor (MOSFET) to implement in high-frequency power amplifiers of commercial two-way radios. The model provided a remarkable 50W power output within the 763MHz to 870MHz band, alongside an impressive total efficiency of 40%, aiming to extend radio communication reach and lower power usage.
Jun-2022: Mitsubishi Electric Corporation introduced a fresh IGBT module designed for use in significant photovoltaic (PV) installations. The 2.0kV LV100 unit utilized the company’s advanced IGBT technology and Relaxed Field of Cathode (RFC) diodes, catering to industrial needs for a power converter between DC1500 V and 3.3 kV.
Mar-2022: NXP Semiconductors N.V. released a series of RF power discrete solutions tailored for 32T32R active antenna systems, featuring their latest proprietary gallium nitride (GaN) technology. This fresh series supplements NXP’s current range of individual GaN power amplifier solutions for 64T64R radios, spanning all cellular frequency bands between 2.3 and 4.0 GHz.
Acquisitions and Mergers:
Mar-2023: Infineon Technologies AG signed an agreement to acquire GaN Systems, a global technology leader in the development of GaN-based solutions for power conversion. The acquisition would enhance Infineon’s dominance in Power Systems by mastering essential power technologies, including silicon, silicon carbide, and gallium nitride.
Jun-2022: Diodes Incorporated completed the acquisition of Onsemi’s wafer fabrication facility and operations situated in South Portland, Maine. Through this acquisition, Diodes has maintained the production of Onsemi’s products at SPFAB while Onsemi transitions this manufacturing to its alternate wafer fabs.
Geographical Expansions:
Sep-2021: Infineon Technologies AG opened a new facility of power electronics chip factory on 300-millimeter thin wafers at its Villach location in Austria. with the expansion of its production capacities, Infineon would establish an industrial landmark, ensuring supply reliability for both European industries and the worldwide market.
Scope of the Study
Market Segments covered in the Report:
By Type (Volume, Million Units, USD Million, 2019-2030)

    • Bipolar Junction Transistor
    • Field Effect Transistor
    • Heterojunction Bipolar Transistor

By Technology (Volume, Million Units, USD Million, 2019-2030)

  • • Low-voltage FETs
    • RF Microwave Power
    • High-Voltage FETs
    • IGBT Transistor

By Vertical (Volume, Million Units, USD Million, 2019-2030)

  • • Manufacturing
    • Consumer Electronics
    • Automotive
    • IT & Telecommunication
    • Others

By Geography (Volume, Million Units, USD Million, 2019-2030)

  • • North America

o US
o Canada
o Mexico
o Rest of North America

  • • Europe

o Germany
o UK
o France
o Russia
o Spain
o Italy
o Rest of Europe

  • • Asia Pacific

o China
o Japan
o India
o South Korea
o Singapore
o Malaysia
o Rest of Asia Pacific

  • • LAMEA

o Brazil
o Argentina
o Saudi Arabia
o South Africa
o Nigeria
o Rest of LAMEA
Companies Profiled

  • • Texas Instruments, Inc.
    • Infineon Technologies AG
    • NXP Semiconductors N.V.
    • STMicroelectronics N.V.
    • Microchip Technology Incorporated
    • Mitsubishi Electric Corporation
    • Renesas Electronics Corporation
    • Vishay Intertechnology, Inc.
    • Rohm Co., Ltd.
    • Diodes Incorporated

Unique Offerings from KBV Research

  • • Exhaustive coverage
    • Highest number of market tables and figures
    • Subscription based model available
    • Guaranteed best price
    • Assured post sales research support with 10% customization free