The global ferroelectric RAM market size reached US$ 313.8 Million in 2022. Looking forward, IMARC Group expects the market to reach US$ 381.2 Million by 2028, exhibiting a growth rate (CAGR) of 3.3% during 2022-2028.

A ferroelectric random-access memory (RAM), or FRAM, refers to a RAM that provides faster read-and-write access of dynamic RAM. It consists of a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line and a capacitor connected to a plate. Serial and parallel memory are two of the primarily used FRAM, which are installed in consumer electronics, such as personal digital assistants (PDAs), smartphones and wireless products, smart meters, automobile electronics, smart cards and medical and wearable devices. In comparison to the traditionally used flash drives, FRAM consumes lesser power and offers a higher number of write-erase cycles and faster write performance.

Significant growth in the information technology (IT) industry across the globe represents one of the key factors creating a positive outlook for the market. Furthermore, the widespread adoption of electronic handheld devices is also driving the market growth. Smart meter manufacturers are also adopting FRAM to operate battery-powered wireless sensors to increase the operational life and minimize the overall maintenance costs. This, in turn, is further strengthening the market growth. Additionally, various technological advancements, such as the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are acting as other growth-inducing factors. Modern FRAM is being used for applications that require continuous, high-frequency and highly reliable data logging for the test and measurement of factory equipment and non-volatile data capture of industrial processes. Other factors, including increasing industrial automation, along with extensive research and development (R&D) activities, are anticipated to drive the market further.

Key Market Segmentation:
IMARC Group provides an analysis of the key trends in each sub-segment of the global ferroelectric RAM market report, along with forecasts at the global, regional and country level from 2023-2028. Our report has categorized the market based on type, application and end use.

Breakup by Type:

Serial Memory
Parallel Memory
Others

Breakup by Application:

Mass Storage
Embedded Storage
Others

Breakup by End Use:

Security Systems
Energy Meters
Smart Cards
Consumer Electronics
Wearable Electronics
Automotive Electronics
Others

Breakup by Region:

North America
United States
Canada
Asia Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa

Competitive Landscape:
The report has also analysed the competitive landscape of the market with some of the key players being Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.

Key Questions Answered in This Report

1. What was the size of the global ferroelectric RAM market in 2022?
2. What is the expected growth rate of the global ferroelectric RAM market during 2023-2028?
3. What are the key factors driving the global ferroelectric RAM market?
4. What has been the impact of COVID-19 on the global ferroelectric RAM market?
5. What is the breakup of the global ferroelectric RAM market based on the type?
6. What is the breakup of the global ferroelectric RAM market based on the application?
7. What are the key regions in the global ferroelectric RAM market?
8. Who are the key players/companies in the global ferroelectric RAM market?