Market Overview
The global SiC power semiconductor market reached US$ XX million in 2022 and is projected to witness lucrative growth by reaching up to US$ XX million by 2030. The market is growing at a CAGR of 33.1% during the forecast period (2023-2030).
Rising demand for energy-efficient and environmentally friendly solutions in various applications, such as electric vehicles and renewable energy systems. Growing adoption of SiC power semiconductors in high-power and high-temperature applications due to their higher efficiency and thermal stability compared to traditional Silicon-based power semiconductors. Technological advancements in SiC power semiconductors led to the development of new products with improved performance and cost-effectiveness.

Market Dynamics
Advancements in SiC power semiconductor technology
Advancements in SiC power semiconductor technology are a significant driving factor for the global SiC power semiconductor market growth. SiC power semiconductors offer several advantages over traditional silicon-based devices, such as higher efficiency, higher power densityand higher temperature operation. Recent advancements in SiC power semiconductor technology, such as the development of SiC MOSFETs, have further improved the performance and reliability of SiC power electronics.
SiC MOSFETs are a transistor type that uses a gate oxide layer made of silicon carbide rather than traditional silicon dioxide. This design offers several advantages, including lower on-resistance, faster switching speedsand reduced gate drive requirements. These benefits help to reduce the cost and improve the efficiency of SiC power electronics, making them more competitive with traditional silicon-based devices.
The high cost of SiC power semiconductors
The high cost of Silicon Carbide (SiC) power semiconductors is one of the main factors hampering the growth of the global market. SiC power semiconductors are made of high-quality materials, which are expensive to manufacture. Additionally, the production process of SiC power semiconductors is complex and requires specialized equipment and technology, which further increases the cost.
The high cost of SiC power semiconductors is a major barrier to widespread adoption, especially for consumer and industrial applications where cost sensitivity is high. The high cost of these devices also makes them less accessible to smaller companies and startups, which can limit innovation and competition in the market.

COVID-19 Impact Analysis
The COVID-19 Analysis includes Pre-COVID Scenario, COVID Scenario and Post-COVID Scenario along with Pricing Dynamics (Including pricing change during and post-pandemic comparing it with pre-COVID scenarios), Demand-Supply Spectrum (Shift in demand and supply owing to trading restrictions, lockdown and subsequent issues), Government Initiatives (Initiatives to revive market, sector or Industry by Government Bodies) and Manufacturers Strategic Initiatives (What manufacturers did to mitigate the COVID issues will be covered here).

Segment Analysis
The global SiC power semiconductor market is segmented based on component, application, end-user and region.
The growing popularity of SiC discrete contributes to the global market growth
SiC discrete are an important part of the SiC power semiconductor market and have supported its growth. Discrete devices are individual components used to control the electricity flow in a circuit and they offer many benefits compared to traditional silicon-based devices. SiC discrete are an important component of the SiC power semiconductor market. They have helped to drive its growth by enabling higher efficiency, higher switching frequency, smaller sizeand increased reliability. As the demand for high-performance, energy-efficient devices continues to grow. SiC discrete are expected to play an increasingly important role in the global semiconductor market.

Geographical Analysis
Growing demand for renewable energy and increased technological advancements in the region augment the growth of the North American market
North American countries such as U.S. and Canada have been at the forefront of technological advancements in SiC power semiconductors. Many of the leading SiC power semiconductor companies are based in North Americaand they are constantly investing in their research and development to enhance the performance and reduce the cost of SiC power devices. The growing shift towards renewable energy sources such as wind and solar drives the demand for SiC power semiconductors in North America. SiC power devices are more efficient than traditional silicon-based devices, making them ideal for renewable energy applications.

Competitive Landscape
The major global players in the market include Nouryon, Dow, BASF, Kemira OYJ, Mitsubishi Chemical Holdings Corporation, ADM, Nippon Shokubai Co. Ltd., Ascend Performance Materials, Hexion and Eastman Chemical Company.
Why Purchase the Report?

  • To visualize the global SiC power semiconductor market segmentation based on component, application, end-user and region, as well as understand key commercial assets and players.
  • Identify commercial opportunities by analyzing trends and co-development.
  • Excel data sheet with numerous data points of SiC power semiconductor market-level with all segments.
  • PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
  • Product mapping available as excel consisting of key products of all the major players.

The global SiC power semiconductor market report would provide approximately 61 tables, 63 figures and 190 Pages.
Target Audience 2023

  • Manufacturers/ Buyers
  • Industry Investors/Investment Bankers
  • Research Professionals
  • Emerging Companies