The Latin America, Middle East and Africa Gate Driver ICs Market would witness market growth of 11.8% CAGR during the forecast period (2018 – 2024).
Gate driver ICs are suitable for several applications including major home appliances, industrial motor drives, solar inverters, UPS, switched mode power supplies, high-voltage lightning, and others. Furthermore, the use of power transistors in various renewable energy systems has accelerated the acceptance of gate driver ICs among major manufacturers. Increased use of silicon carbide gate drivers and gallium nitrite gate drivers implies advanced protection from short circuit.
In most applications, a system needs a switch to be able to work properly. Since there are no ideal switches, almost all of the time the component chosen for this task is a MOSFET. Typically, a MOSFET needs a gate driver to do the on/off operation at the preferred frequency. For high frequencies, MOSFETs involve a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals required to control the MOSFET.
Based on Transistor Type, the market is segmented into MOSFET and IGBT. Based on Semiconductor Material, the market is segmented into SiC and GaN. Based on Mode of Attachment, the market is segmented into On-chip and Discrete. Based on End User, the market is segmented into Industrial, Commercial and Residential. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Infineon Technologies AG, Mitsubishi Electric Corporation, Nxp Semiconductor, On Semiconductor, Rohm Semiconductors, Renesas Electronics, Stmicroelectronics, Semtech Corporation, Texas Instruments, Toshiba Corporation, and Dialog Semiconductor PLC.