The North America Gate Driver ICs Market would witness market growth of 7.0% CAGR during the forecast period (2018 – 2024).
Growing numbers of digital electronic devices, the adoption of advanced electronic vehicles and advanced virtual systems have fueled several growth opportunities for global market share of gate driver ICs. Major players are implementing new products and acquiring smaller semiconductor companies to reinforce their market presence and deliver next-generation power modules. For example, Infineon Technologies AG introduced the IRS2007S 200 V half-bridge gate driver IC in a standard SOIC-8 (DSO-8) package. This new product is featured under a voltage lockout (UVLO). The new gate driver guarantees higher efficiency in start-up operations than previous generations of products. The launched product is tailored to low voltage and medium voltage and is suitable for household and garden power tools as well as light electric vehicles such as e-bikes and e-scooters and drones.
Based on Transistor Type, the market is segmented into MOSFET and IGBT. Based on Semiconductor Material, the market is segmented into SiC and GaN. Based on Mode of Attachment, the market is segmented into On-chip and Discrete. Based on End User, the market is segmented into Industrial, Commercial and Residential. Based on countries, the market is segmented into U.S., Mexico, Canada, and Rest of North America.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Infineon Technologies AG, Mitsubishi Electric Corporation, Nxp Semiconductor, On Semiconductor, Rohm Semiconductors, Renesas Electronics, Stmicroelectronics, Semtech Corporation, Texas Instruments, Toshiba Corporation, and Dialog Semiconductor PLC.