Table of Content

Table of Contents

INTRODUCTION 5
METHODOLOGY 13
EXECUTIVE SUMMARY 18
SiC MOSFETs 36
Patent landscape overview 40
• Time evolution of patent publications
• Leading patent applicants
• Main patent applicants by country of head office
• Main IP players: Number of patents and current legal status
• Time evolution of main patent applicants
• Most current active players
• Focus on CREE/Wolfspeed
• New entrants
• Focus on Hestia Power
• Geographic coverage of patent filings and corresponding current legal
status of patents
• Main patent assignees vs. Countries of granted/pending patents
• Patents recently expired
• Patents near expiration date
• Conclusion
Patent segmentation 60
For each planar MOSFET, trench MOSFET and gate oxide:
- Time evolution of patent publications
- Main patent assignees
- IP trends for main patent applicants
• Planar SiC MOSFET 70
- IP leadership of patent assignees
- IP blocking potential of patent assignees
- Strength of patent portfolios
- Key patent families
• Trench SiC MOSFET 75
- IP leadership of patent assignees
- IP blocking potential of patent assignees
- Strength of patent portfolios
- Key patent families
• Gate oxide 80
Recent developments from major IP players to address reliability
issues due to gate oxide in SiC trench MOSFET.
SiC SCHOTTKY BARRIER DIODE 91
• Time evolution of patent applicants
• IP leadership of patent assignees
• Key patent families
• Historical patent applicants and their recent patents
• New entrants and their patents
• Conclusion
SiC POWER MODULE 114
• Time evolution of patent publications
• Time evolution of main patent applicants
• IP leadership of patent assignees
• Full SiC power modules
• Hybrid SiC power modules
• Key patent families
• Review of portfolio for IP leaders
• Focus on new entrants
• Conclusion
CONCLUSION 135