The global GaN power device market witnessed robust growth during 2014-2019. The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the semiconductor. As compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device has lower on-resistance, lesser output capacitance and higher electric-field strength. It also conducts more electrons, reduces switch node ringing and increases efficiency. Besides this, it is compact, fast and lightweight, owing to which it is gaining traction in commercial and industrial applications across various industrial products.

The market is presently being driven by the extensive utilization of GaN power devices in various end use industries. For instance, it is used in the lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Governments of several countries are introducing stringent policies on greenhouse gas (GHG) emissions, which is boosting the sales of EVs and HEVs around the world. They are also promoting the adoption of energy-efficient devices, which is further influencing the demand for GaN power devices in the defense and aerospace industries. Apart from this, these devices are utilized in radars to enhance navigation, avoid collision and enable real-time air traffic control. Moreover, they are employed in the manufacturing of healthcare scanning equipment, such as sonograms, magnetic resonance imaging (MRI) and miniaturized X-ray machines, to provide precision while performing surgeries. Furthermore, they are used in small cell, distributed antenna systems (DAS) and remote radio head network densification. Besides this, the increasing adoption of the internet of things (IoT) technology, along with the introduction of 5G technology, is expected to create lucrative opportunities for manufacturers in the coming years. Looking forward, IMARC Group expects the global GaN power device market to experience strong growth during the next five years.

Breakup by Device Type:

Power Device
Discrete Power Device
Integrated Power Device
RF Power Device
Discrete RF Power Device
Integrated RF Power Device

Breakup by Voltage Range:

<200 Volt
200–600 Volt
>600 Volt

Breakup by Application:

Power Drives
Power Supply Systems
Radio Frequency Based Systems

Breakup by End-Use Industry:

Telecommunications
Automotive
Renewable Power Generation
Military
Aerospace and Defense
Consumer Electronics
Others

Breakup by Region:

North America
United States
Canada
Asia Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa

Competitive Landscape:

The report has also analysed the competitive landscape of the market with some of the key players being Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.

Key questions answered in this report:

How has the global GaN power device market performed so far and how will it perform in the coming years?
What are the key regional markets?
What has been the impact of COVID-19 on the global GaN power device market?
What is the breakup of the market based on the device type?
What is the breakup of the market based on the voltage range?
What is the breakup of the market based on the application?
What is the breakup of the market based on the end-use industry?
What are the various stages in the value chain of the industry?
What are the key driving factors and challenges in the industry?
What is the structure of the global GaN power device market and who are the key players?
What is the degree of competition in the industry?