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Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since even "nonconducting" transistors always leak a small amount, the capacitors will slowly discharge, and the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to static random-access memory (SRAM) and other static types of memory. Unlike flash memory, DRAM is volatile memory (vs. non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

DRAM is widely used in digital electronics where low-cost and high-capacity memory is required. One of the largest applications for DRAM is the main memory (colloquially called the "RAM") in modern computers; and as the main memories of components used in these computers such as graphics cards (where the "main memory" is called the graphics memory). In contrast, SRAM, which is faster and more expensive than DRAM, is typically used where speed is of greater concern than cost, such as the cache memories in processors.

The advantage of DRAM is its structural simplicity: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities. The transistors and capacitors used are extremely small; billions can fit on a single memory chip. Due to the dynamic nature of its memory cells, DRAM consumes relatively large amounts of power, with different ways for managing the power consumption.

This report provides detailed analysis of worldwide markets for Dynamic Random Access Memory (DRAM) from 2011-2015 and provides extensive market forecasts 2016-2021 by region/country and subsectors. It covers the key technological and market trends in the Dynamic Random Access Memory (DRAM) market and further lays out an analysis of the factors influencing the supply/demand for Dynamic Random Access Memory (DRAM), and the opportunities/challenges faced by industry participants. It also acts as an essential tool to companies active across the value chain and to the new entrants by enabling them to capitalize the opportunities and develop business strategies.

GCC’s report, Global Dynamic Random Access Memory (DRAM) Market Outlook 2016-2021, has been prepared based on the synthesis, analysis, and interpretation of information about the global Dynamic Random Access Memory (DRAM) market collected from specialized sources. The report covers key technological developments in the recent times and profiles leading players in the market and analyzes their key strategies. The competitive landscape section of the report provides a clear insight into the market share analysis of key industry players. The major players in the global Dynamic Random Access Memory (DRAM) market are Samsung (South Korea), SK Hynix (South Korea), Micron (USA), Nanya Technology (Taiwan), Winbond (Taiwan), among others.

The report provides separate comprehensive analytics for the North America, Europe, Asia-Pacific, Middle East and Africa and Rest of World. In this sector, global competitive landscape and supply/demand pattern of Dynamic Random Access Memory (DRAM) industry has been provided.